8-Inch SiC Resistance-Heated Dual Heater Single Crystal Growth Furnace
● Primarily used for the growth of 8-inch 4H-N type SiC single crystals.
● The equipment incorporates crystal growth technology, seed crystal bonding technology, temperature field control technology, and atmosphere control technology.
● Target Users: SiC substrate manufacturers, semiconductor R&D institutes, and third-generation semiconductor material suppliers.
Description
Reviews
The 8-Inch SiC crystal growth equipment is an advanced solution designed for high-quality 4H-N type silicon carbide crystal growth. It integrates resistive heating technology and precise temperature field control to ensure high efficiency and uniformity in crystal production.
Equipment Technical Parameters:
|
System |
Item |
Specification |
|
Power Supply |
|
3-phase 380V 50Hz |
|
Vacuum Chamber |
Diameter × Height |
900mm × 1100mm |
|
|
Rated Power |
30kW, 50kW |
|
|
Rated Input Current |
130A |
|
High Precision 3-Phase AC Power Supply |
Rated Input Voltage |
3-phase 380VAC, 50Hz |
|
|
Rated Output I Current & Voltage |
1443A, 12V |
|
|
Rated Output II Current & Voltage |
1519A, 19V |
|
Vacuum System |
Ultimate Vacuum |
Chamber ultimate vacuum < 1 × 10⁻³ Pa |
|
|
System Holding Pressure |
Room temperature furnace, leak rate < 10 Pa within 12h |
|
Heating Temperature |
Maximum Temperature |
2400°C |
|
Temperature Measurement |
Range |
1000–3000°C |
|
Gas System |
Gas Supply Lines |
2–Ar, N₂ |
|
|
Control Accuracy |
≤ ±2% |
|
Pressure Control System
|
Pressure Range |
50 Pa ~ 80 kPa |
|
|
Control Accuracy (50Pa ≤ P ≤ 500Pa) |
≤ ±5 Pa |
|
Temperature Control System
|
Control Mode |
Power control, accuracy ±20W |
|
|
Control Range |
1000–2500°C |
|
|
Control Accuracy |
±5°C |
|
Water Cooling System |
Inlet Water Pressure |
>0.3 MPa (design pressure 0.5 MPa) |
|
|
Inlet Water Temperature |
25°C ± 1°C |
|
|
Outlet Water Temperature |
<40°C |
